Ion Beam Assisted Maskless Etching of GaAs by 50 keV Focused Ion Beam
- 1 December 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (12A), L792
- https://doi.org/10.1143/jjap.21.l792
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Fabrication of 80 nm-Wide Lines in FPM Resist by H+ Beam ExposureJapanese Journal of Applied Physics, 1981
- A novel anisotropic dry etching techniqueJournal of Vacuum Science and Technology, 1981
- Etched Profile of Si by Ion-Bombardment-Enhanced EtchingJapanese Journal of Applied Physics, 1981
- Plasma etching of III–V compound semiconductor materials and their oxidesJournal of Vacuum Science and Technology, 1981
- High-resolution, ion-beam processes for microstructure fabricationJournal of Vacuum Science and Technology, 1979
- Ion- and electron-assisted gas-surface chemistry—An important effect in plasma etchingJournal of Applied Physics, 1979