Ellipsometric study of silicon implanted with boron ions in low doses
- 15 April 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 34 (8), 518-519
- https://doi.org/10.1063/1.90848
Abstract
Ellipsometry was applied to estimate crystal damage in silicon caused by boron‐ion implantation in low doses. A highly sensitive parameter for crystal damage is proposed which is derived from the extinction coefficient of the complex refractive index. Crystal damage caused by ion implantation at doses as low as 3×1011 cm−2 and the annealing effect on crystal damage of heat treatment in dry N2 ambient after ion implantation were clearly detected by the parameter.Keywords
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