X-ray scattering from a single-quantum-well heterostructure
- 1 April 1987
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 2 (4), 241-243
- https://doi.org/10.1088/0268-1242/2/4/007
Abstract
The authors have observed interference fringes in x-ray scattering from a single-quantum-well structure of InGaAs, 230 AA thick, in InP. The interference fringe pattern is amenable to a straightforward physical interpretation and contains information on the lattice parameter strain, the thickness and interface roughness of the quantum well. The latter two parameters can be measured with an accuracy of several angstroms. The sensitivity of the experiment is enhanced by the use of glancing-incidence scattering geometry and a triple-crystal x-ray diffractometer.Keywords
This publication has 5 references indexed in Scilit:
- X-ray double-crystal characterization of highly perfect InGaAs/InP grown by vapor-phase epitaxyJournal of Applied Physics, 1986
- X-Ray Double Crystal Diffractometry of Multiple and Very Thin Heteroepitaxial LayersAdvances in X-ray Analysis, 1985
- Variation of Bragg-Case Diffraction Curves of X-Rays from a Thin Silicon Crystal with Crystal ThicknessJournal of the Physics Society Japan, 1970
- X-ray Pendellösung fringes in Darwin reflectionActa Crystallographica Section A, 1968
- Messungen zur Röntgenstrahl-Optik des Idealkristalls. II. Diffraction Pattern mit `Pendellösung' gleicher NeigungActa Crystallographica Section A Foundations and Advances, 1968