Boron impurity anti-site defects in p-type gallium-rich gallium arsenide
- 10 October 1983
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 16 (28), 5523-5533
- https://doi.org/10.1088/0022-3719/16/28/019
Abstract
No abstract availableKeywords
This publication has 23 references indexed in Scilit:
- Residual double acceptors in bulk GaAsApplied Physics Letters, 1983
- Host isotope fine structure of local modes: C and Si in GaAsJournal of Physics C: Solid State Physics, 1982
- Infrared absorption of the 78-meV acceptor in GaAsApplied Physics Letters, 1982
- Stoichiometry-controlled compensation in liquid encapsulated Czochralski GaAsApplied Physics Letters, 1982
- A low-symmetry interstitial boron centre in irradiated gallium arsenideJournal of Physics C: Solid State Physics, 1978
- Carbon, oxygen and silicon impurities in gallium arsenideJournal of Physics D: Applied Physics, 1978
- The incorporation and characterisation of acceptors in epitaxial GaAsJournal of Physics and Chemistry of Solids, 1975
- An infra-red study of defects produced in n-type silicon by electron irradiation at low temperaturesSolid State Communications, 1971
- Localized mode frequency for substitutional impurities in zinc blende type crystalsJournal of Physics and Chemistry of Solids, 1971
- Absorption by the vibrations of uncharged atomsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1967