The Formation of Amorphous Silicon by Light Ion Damage
- 1 January 1985
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- On silicon amorphization during different mass ion implantationRadiation Effects, 1973
- Formation of Amorphous Silicon by Ion Bombardment as a Function of Ion, Temperature, and DoseJournal of Applied Physics, 1972
- Ion implantation in semiconductors—Part II: Damage production and annealingProceedings of the IEEE, 1972
- Nucleation of damage centres during ion implantation of siliconRadiation Effects, 1971
- A model for the formation of amorphous Si by ion bombardmentRadiation Effects, 1970
- POST ANNEALING CONDUCTANCE BEHAVIOR OF IMPLANTED LAYERS IN SILICONApplied Physics Letters, 1969
- Relation of neutron to ion damage annealing in Si and GeRadiation Effects, 1969