Internal photoemission in the anodic oxide/GaAs interface
- 15 January 1981
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 38 (2), 97-99
- https://doi.org/10.1063/1.92269
Abstract
The barrier height at the anodic oxide/GaAs interface has been determined by internal photoemission of the metal‐oxide‐semiconductor structures. The height of the potential barrier between the oxide and GaAs is found to be 2.62±0.05 eV for as‐grown and 2.39±0.05 eV for hydrogen‐annealed specimens. Quantum yield below the photoemission threshold is interpreted in terms of electron emission from interface states at energies above midgap of GaAs.Keywords
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