Excitation and deexcitation of Er3+ in crystalline silicon
- 31 March 1997
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (13), 1721-1723
- https://doi.org/10.1063/1.118680
Abstract
Temperature dependent measurements of the 1.54 μm photoluminescence of Er implanted N codoped crystalline Si are made. Upon increasing the temperature from 12 to 150 K, the intensity quenches by more than a factor thousand, while the lifetime quenches from 420 to 3 μs. The quenching processes are described by an impurity Auger energy transfer model that includes bound exciton dissociation and a nonradiative energy backtransfer process. Electron and hole trap levels are determined. Direct evidence for a backtransfer process follows from spectral response measurements on an Er-implanted Si solar cell.Keywords
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