Impurity enhancement of the 1.54-μm Er3+ luminescence in silicon
- 1 September 1991
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 70 (5), 2672-2678
- https://doi.org/10.1063/1.349382
Abstract
The effect of impurity coimplantation in MeV erbium‐implanted silicon is studied. A significant increase in the intensity of the 1.54‐μm Er3+ emission was observed for different coimplants. This study shows that the Er3+ emission is observed if erbium can form an impurity complex in silicon. The influence of these impurities on the Er3+ photoluminescence spectrum is demonstrated. Furthermore we show the first room‐temperature photoluminescence spectrum of erbium in crystalline silicon.Keywords
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