The Concentration Gradient of Zn near a p-n Junction in III–V Compounds
- 1 December 1967
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 38 (13), 5411-5412
- https://doi.org/10.1063/1.1709337
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- The Effect of Applied Electric Field on Diffusion of Impurities in Gallium ArsenidePhysica Status Solidi (b), 1967
- Capacitance-voltage dependence of zinc-diffused GaAs p-n junctionsSolid-State Electronics, 1965
- The junction depth of concentration-dependent diffusion. Zinc in III–V compoundsSolid-State Electronics, 1964
- Diffusion of Zn into GaAs under the Presence of Excess Arsenic VaporJournal of Applied Physics, 1964
- Diffusion Mechanism of Zn in GaAs and GaP Based on Isoconcentration Diffusion ExperimentsJournal of Applied Physics, 1964
- Diffusion and Solubility of Zinc in Gallium Phosphide Single CrystalsJournal of Applied Physics, 1964
- Diffusion with Interstitial-Substitutional Equilibrium. Zinc in GaAsPhysical Review B, 1963
- Diffusion of zinc in gallium arsenideJournal of Physics and Chemistry of Solids, 1960