Surface modification of polycrystalline p-CuInS2 and p-CuInSe2 electrodes for improved solar cell performance
- 30 September 1983
- journal article
- Published by Elsevier in Solar Energy Materials
- Vol. 9 (2), 159-166
- https://doi.org/10.1016/0165-1633(83)90038-2
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- n-CuInSe2/polysulfide photoelectrochemical solar cellsApplied Physics Letters, 1982
- Oxide optimization at the p-Si/aqueous electrolyte interfaceApplied Physics Letters, 1981
- Electrolyte-oxide-semiconductor junction at the p-InP/V 2+-V 3+ interfaceApplied Physics Letters, 1981
- Photoelectrochemistry of the CuInS2/Sn2− systemSolar Energy Materials, 1981
- Silicon photocathode behavior in acidic vanadium(II)-vanadium(III) solutionsJournal of the American Chemical Society, 1981
- An efficient photocathode for semiconductor liquid junction cells: 9.4% solar conversion efficiency with p-InP/VCl3-VCl2-HCl/CJournal of the American Chemical Society, 1980
- Combined Ruthenium Lead Surface Treatment of Gallium Arsenide PhotoanodesBerichte der Bunsengesellschaft für physikalische Chemie, 1980
- Effects of Cations on the Performance of the Photoanode in the n ‐ GaAs | K 2Se ‐ K 2Se2 ‐ KOH | C Semiconductor Liquid Junction Solar CellJournal of the Electrochemical Society, 1979
- CuInS2 Liquid Junction Solar CellsJournal of the Electrochemical Society, 1978
- Erratum: Excitation mechanism of the He-I+ laserApplied Physics Letters, 1976