Properties of Ion-Implanted Bi in CdS
- 1 December 1969
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 40 (13), 5320-5323
- https://doi.org/10.1063/1.1657390
Abstract
It has been reported that room‐temperature Bi implants with no post‐implantation annealing produce high‐conductivity p‐type layers in ordinarily n‐type CdS. We have similarly implanted Bi and also Xe into CdS at the 1015 cm−2 level, and have studied various properties including optical absorption, photoluminescence, and photovoltage. In all cases, similar behavior is observed with both Bi and Xe implants, which indicates that radiation damage effects are dominating any purely chemical effects.Keywords
This publication has 10 references indexed in Scilit:
- ANNEALING CHARACTERISTICS OF n-TYPE DOPANTS IN ION-IMPLANTED SILICONApplied Physics Letters, 1969
- TYPE CONVERSION AND p-n JUNCTION FORMATION IN ION-IMPLANTED ZnTeApplied Physics Letters, 1969
- Observation of ion bombardment damage in siliconPhilosophical Magazine, 1968
- PHOSPHOROUS-ION-IMPLANTED CdSApplied Physics Letters, 1968
- HIGH CONDUCTIVITY p-TYPE CdSApplied Physics Letters, 1968
- TYPE CONVERSION AND p-n JUNCTIONS IN n-CdTe PRODUCED BY ION IMPLANTATIONApplied Physics Letters, 1968
- ION IMPLANTATION OF SILICON: I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MeV HELIUM ION SCATTERINGCanadian Journal of Physics, 1967
- ION IMPLANTATION OF SILICON: II. ELECTRICAL EVALUATION USING HALL-EFFECT MEASUREMENTSCanadian Journal of Physics, 1967
- The effects of low temperature heat treatments on the conductivity and photoluminescence of CdSJournal of Physics and Chemistry of Solids, 1965
- Self-Compensation-Limited Conductivity in Binary Semiconductors. III. Expected Correlations With Fundamental ParametersPhysical Review B, 1964