A Quantum Chemical Study of the Atomic Layer Deposition of Al2O3 Using AlCl3 and H2O as Precursors
- 14 April 2004
- journal article
- research article
- Published by American Chemical Society (ACS) in The Journal of Physical Chemistry B
- Vol. 108 (18), 5718-5725
- https://doi.org/10.1021/jp049762x
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
- Quantum chemical study of the mechanism of aluminum oxide atomic layer depositionApplied Physics Letters, 2002
- Multi-component high-K gate dielectrics for the silicon industryMicroelectronic Engineering, 2001
- High-κ gate dielectrics: Current status and materials properties considerationsJournal of Applied Physics, 2001
- Effect of SiO2 intermediate layer on Al2O3/SiO2/n+-poly Si interface deposited using atomic layer deposition (ALD) for deep submicron device applicationsSurface and Coatings Technology, 2000
- Dependence of atomic layer-deposited Al2O3 films characteristics on growth temperature and Al precursors of Al(CH3)3 and AlCl3Journal of Vacuum Science & Technology A, 1997
- Introducing atomic layer epitaxy for the deposition of optical thin filmsThin Solid Films, 1996
- Surface Chemistry for Atomic Layer GrowthThe Journal of Physical Chemistry, 1996
- Al2O3 coatings against high temperature corrosion deposited by metal-organic low pressure chemical vapour depositionThin Solid Films, 1994
- Growth and characterization of aluminium oxide thin films deposited from various source materials by atomic layer epitaxy and chemical vapor deposition processesMaterials Chemistry and Physics, 1991
- Preparation of alumina coatings by chemical vapour depositionThin Solid Films, 1986