Electron spin resonance of [11̄1], [1̄11], and [111̄] oriented dangling orbital P b0 defects at the (111) Si/SiO2 interface
- 14 April 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (15), 972-974
- https://doi.org/10.1063/1.96627
Abstract
The observation of (111) Si/SiO2 interface Pb0 defects (modeled as 0Si≡Si3) with dangling bonds positioned along [11̄1], [1̄11], and [111̄] from low‐temperature (T≲30 K) electron spin resonance measurements is reported. This is connected with the particular structure (SiOx) of the attendant very near‐Si interfacial transition region for the oxidation method invoked. Some instructive information as to the precise atomic modeling of the Si/SiO2 interface is inferred.Keywords
This publication has 9 references indexed in Scilit:
- X and K band ESR study of the Pb Interface centres in thermally oxidized p-type (001)Si wafers at low temperatures and influence of medium-dose As+ ion implantationSurface Science, 1984
- Probing the transition layer at the SiO2-Si interface using core level photoemissionApplied Physics Letters, 1984
- 2 9Si hyperfine structure of unpaired spins at the Si/SiO2 interfaceApplied Physics Letters, 1983
- Si-SiO2 interface structures on Si(100), (111), and (110) surfacesApplied Physics Letters, 1983
- Characterization of Si/SiO2 interface defects by electron spin resonanceProgress in Surface Science, 1983
- LEED studies of surface imperfectionsApplications of Surface Science, 1982
- High-Resolution X-Ray Photoelectron Spectroscopy as a Probe of Local Atomic Structure: Application to Amorphous Siand the Si-SiInterfacePhysical Review Letters, 1979
- Local atomic and electronic structure of oxide/GaAs and SiO2/Si interfaces using high-resolution XPSJournal of Vacuum Science and Technology, 1979
- General Relationship for the Thermal Oxidation of SiliconJournal of Applied Physics, 1965