Growth of strained-layer semiconductor-metal-semiconductor heterostructures
- 12 May 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (19), 1264-1266
- https://doi.org/10.1063/1.96998
Abstract
Single crystal epitaxial strained‐layer semiconductor‐metal‐semiconductor heterostructures have been grown for the first time. Silicon layers were grown by molecular beam epitaxy over thin (2 layers on Si(111). The presence of ∼20 Å Si template layers formed at low temperature (2 and had a channeling minimum yield of ∼3%. Epitaxial strained‐layer semiconductor‐metal‐semiconductor heterostructures represent a new class of material system with potential for high‐speed device applications.Keywords
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