Growth of Si nanocrystals on alumina and integration in memory devices
- 2 June 2003
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 82 (23), 4151-4153
- https://doi.org/10.1063/1.1577409
Abstract
We present a detailed study of the growth of Si quantum dots (Si QDs) by low pressure chemical vapor deposition on alumina dielectric deposited by atomic layer deposition. The Si QDs density is very high, for a mean diameter between 5 and 10 nm. QD stacks have been integrated in memory devices as granular floating gate. The devices demonstrate good charge storage and data retention characteristics.
Keywords
This publication has 11 references indexed in Scilit:
- Synthesis and characterization of aerosol silicon nanocrystal nonvolatile floating-gate memory devicesApplied Physics Letters, 2001
- Robustness of ultrathin aluminum oxide dielectrics on Si(001)Applied Physics Letters, 2001
- Control of self-assembling formation of nanometer silicon dots by low pressure chemical vapor depositionThin Solid Films, 2000
- Silicon quantum dot nucleation on Si3N4, SiO2 and SiOxNy substrates for nanoelectronic devicesJournal of Crystal Growth, 2000
- Monosilane Adsorption on Porous AluminaJournal of the Electrochemical Society, 1995
- Room-temperature single-electron memoryIEEE Transactions on Electron Devices, 1994
- High-resolution electron-energy-loss spectroscopy of isolated hydroxyl groups on α-Al2O3(0001)Surface Science, 1994
- Concentration of hydroxyl groups on the surface of amorphous silicasLangmuir, 1987
- Low pressure deposition of polycrystalline silicon from silaneJournal of Crystal Growth, 1981
- Kinetics and mechanism of amorphous hydrogenated silicon growth by homogeneous chemical vapor depositionApplied Physics Letters, 1981