Surface-charge controlled AlGaN/GaN-power HFET without current collapse and gm dispersion
- 13 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 25.4.1-25.4.4
- https://doi.org/10.1109/iedm.2001.979574
Abstract
We demonstrate high voltage HFET operation with suppression of gm dispersion and current collapse using an n-type thin GaN cap layer combined with SiN passivation and a recessed ohmic structure. Polarization-induced surface charge was controlled. Off state and on-state breakdown voltages were 140 V and 70 V. We obtained power HFETs with high CW operation voltage of 35 V without any heat sinking method.Keywords
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