Current instabilities in GaN-based devices
- 1 February 2001
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 22 (2), 62-64
- https://doi.org/10.1109/55.902832
Abstract
Current dispersion effects have been experimentally investigated in a variety of AlGaN/GaN heterostructure FETs with large signal and switching measurements including HEMTs with doped and undoped barrier layer. A range of dispersion frequencies from 10/sup -3/ Hz to 10 GHz were observed, where the output current amplitude is drastically reduced. Through this effect the full channel charge of an AlGaN/GaN heterostructure FET may be completely depleted under specific bias conditions. This indicates that this phenomena cannot be related to deep traps alone, but is also connected to piezorelated charge states and conduction to these states.Keywords
This publication has 9 references indexed in Scilit:
- Direct measurement of gate depletion in high breakdown (405 V) AlGaN/GaN heterostructure field effect transistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTsIEEE Electron Device Letters, 2000
- Observation of deep traps responsible for current collapse in GaN metal–semiconductor field-effect transistorsApplied Physics Letters, 1999
- Effect of Illumination on the Electrical Characteristics of AlGaN/GaN FETsPhysica Status Solidi (a), 1999
- Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxyJournal of Applied Physics, 1999
- Large signal frequency dispersion of AlGaN/GaN heterostructure field effect transistorsElectronics Letters, 1999
- Drain current compression in GaN MODFETs under large-signal modulation at microwave frequenciesElectronics Letters, 1999
- Trap effects studies in GaN MESFETs by pulsed measurementsElectronics Letters, 1999
- High performance GaN/AlGaN MODFETs grown by RF-assisted MBEElectronics Letters, 1998