GaInAsP/InP stripe lasers with etched mirrors fabricated by a wet chemical etch
- 15 August 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (4), 339-341
- https://doi.org/10.1063/1.91939
Abstract
Monolithically etched‐facet‐mirror GaInAsP/InP stripe lasers (1.3 μm) were made using a wet chemical etching technique. Lasers with 20 μm stripes have current thresholds of 300 mA (room temperature, pulsed) about 50% higher than comparable cleaved‐mirror lasers. Nearly single‐mode operation up to 1.51th has been achieved with a cavity length of ∼180 μm.Keywords
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