Vibrational and Electronic Structure of Hydrogen‐Related Defects in Silicon Calculated by the Extended Hückel Theory
- 1 June 1977
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 81 (2), 637-646
- https://doi.org/10.1002/pssb.2220810227
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Bonding and thermal stability of implanted hydrogen in siliconJournal of Electronic Materials, 1975
- EPR of conduction electrons produced in silicon by hydrogen ion implantationPhysica Status Solidi (a), 1974
- Carbon Interstitial in the Diamond LatticePhysical Review B, 1973
- Molecular-Orbital Treatment for Deep Levels in Semiconductors: Substitutional Nitrogen and the Lattice Vacancy in DiamondPhysical Review B, 1973
- Electrical properties of n-type Si layers doped with proton bombardment induced shallow donorsSolid State Communications, 1972
- Application of extended Hueckel theory to the calculation of the potential energy curve of diatomic copperInorganic Chemistry, 1968
- Approximate Self-Consistent Molecular Orbital Theory. II. Calculations with Complete Neglect of Differential OverlapThe Journal of Chemical Physics, 1965
- Defects in Irradiated Silicon: Electron Paramagnetic Resonance of the DivacancyPhysical Review B, 1965
- An Extended Hückel Theory. I. HydrocarbonsThe Journal of Chemical Physics, 1963
- Angular Distributions of (α, n) Reaction son Be and CJournal of the Physics Society Japan, 1963