EPR of conduction electrons produced in silicon by hydrogen ion implantation
- 16 March 1974
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 22 (1), K55-K57
- https://doi.org/10.1002/pssa.2210220156
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Shallow donor formation in Si produced by proton bombardmentPhysica Status Solidi (a), 1973
- Electrical properties of n-type Si layers doped with proton bombardment induced shallow donorsSolid State Communications, 1972
- Structure of multiple-vacancy (oxygen) centers in irradiated siliconRadiation Effects, 1971
- ELECTRON PARAMAGNETIC RESONANCE IN ION IMPLANTED SILICONApplied Physics Letters, 1969