Structural damage at the Si/SiO2 interface resulting from electron injection in metal-oxide-semiconductor devices
- 15 March 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (6), 550-552
- https://doi.org/10.1063/1.95534
Abstract
With electron spin resonance, we have observed structural changes in metal‐oxide‐semiconductor structures resulting from the photoemisson of electrons from the silicon into the oxide. A trivalent silicon defect at the Si/SiO2 interface, termed Pb, is shown to be responsible for the interface states induced by electron injection. We find that these Pb centers are amphoteric interface state defects.Keywords
This publication has 13 references indexed in Scilit:
- Paramagnetic trivalent silicon centers in gamma irradiated metal-oxide-silicon structuresApplied Physics Letters, 1984
- 2 9Si hyperfine structure of unpaired spins at the Si/SiO2 interfaceApplied Physics Letters, 1983
- Characteristic electronic defects at the Si-SiO2 interfaceApplied Physics Letters, 1983
- An electron spin resonance study of radiation-induced electrically active paramagnetic centers at the Si/SiO2 interfaceJournal of Applied Physics, 1983
- Effect of bias on radiation-induced paramagnetic defects at the silicon-silicon dioxide interfaceApplied Physics Letters, 1982
- ESR centers, interface states, and oxide fixed charge in thermally oxidized silicon wafersJournal of Applied Physics, 1979
- 1 µm MOSFET VLSI technology: Part IV—Hot-electron design constraintsIEEE Transactions on Electron Devices, 1979
- Threshold instability in IGFET’s due to emission of leakage electrons from silicon substrate into silicon dioxideApplied Physics Letters, 1976
- Hot-carrier instability in IGFET’sApplied Physics Letters, 1975
- Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance IJapanese Journal of Applied Physics, 1971