Schottky-barrier inhomogeneity at epitaxialNiSi2interfaces on Si(100)

Abstract

The Schottky-barrier height (SBH) of an epitaxial ${\mathrm{NiSi}}_2$ layer grown on Si(100) is shown to depend critically on the morphology of the interface. Single-crystal, uniform, planar ${\mathrm{NiSi}}_2$Si(100) layers have a much lower (n-type) SBH than that of interfaces which are made up of inclined 〈111〉 facets. Interfaces with both planar 〈100〉 sections and inclined 〈111〉 sections exhibit electrical behavior expected of a spatially inhomogeneous SB. We suggest that interface atomic structure determines SBH formation.