Metal-ferroelectric-semiconductor (MFS) FET's using LiNbO/sub 3//Si
- 1 June 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 19 (6), 204-206
- https://doi.org/10.1109/55.678545
Abstract
N-channel metal-ferroelectric-semiconductor field-effect-transistors (MFSFET's) by using rapid thermal annealed LiNbO/sub 3//SiKeywords
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