Passivation analysis of micromechanical silicon structures obtained by electrochemical etch stop
- 31 August 1993
- journal article
- Published by Elsevier in Sensors and Actuators A: Physical
- Vol. 37-38, 744-750
- https://doi.org/10.1016/0924-4247(93)80126-2
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Analysis of nonlinearity in high sensitivity piezoresistive pressure sensorsSensors and Actuators A: Physical, 1993
- Accurate infrared spectroscopy analysis in back-side damaged silicon wafersApplied Surface Science, 1993
- Anisotropic Etching of Crystalline Silicon in Alkaline Solutions: II . Influence of DopantsJournal of the Electrochemical Society, 1990
- Residual stress and mechanical properties of boron-doped p+-silicon filmsSensors and Actuators A: Physical, 1990
- Vertically structured silicon membrane by electrochemical etchingSensors and Actuators A: Physical, 1990
- An investigation of the electrochemical etching ofPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1990
- Formation of etch-stop structures utilizing ion-beam synthesized buried oxide and nitride layers in siliconSensors and Actuators, 1989
- Study of electrochemical etch-stop for high-precision thickness control of silicon membranesIEEE Transactions on Electron Devices, 1989
- Fabrication and Characterization of Si MembranesJournal of the Electrochemical Society, 1988
- Electrochemically Controlled Thinning of SiliconBell System Technical Journal, 1970