Switching characteristics of crossed-film cryotron circuits
- 1 December 1965
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Magnetics
- Vol. 1 (4), 417-423
- https://doi.org/10.1109/tmag.1965.1062996
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Investigation of NbTiN Thin Films and AlN Tunnel Barriers With Ellipsometry for Superconducting Device ApplicationsIEEE Transactions on Applied Superconductivity, 2007
- Bulk Processing in Distributed Logic MemoryIEEE Transactions on Electronic Computers, 1965
- Design of a fully associative cryogenic data processorIEEE Transactions on Magnetics, 1965
- PULSE INDUCED SUPERCONDUCTING TO NORMAL TRANSITIONS IN THIN FILMSCanadian Journal of Physics, 1964
- Silsbee-Limit Critical Currents in a 1700Å Film of TinPhysical Review Letters, 1964
- Structure of a cryogenic associative processorProceedings of the IEEE, 1964
- The in-line cryotronProceedings of the IEEE, 1963
- Switching Speed and Dissipation in Fast, Thin-Film Cryotron CircuitsProceedings of the IRE, 1962
- Thin-Film Cryotrons: Part I-Properties of Thin Superconducting FilmsProceedings of the IRE, 1960
- IXXI. Kinetics of the phase transition in superconductorsJournal of Computers in Education, 1950