Cluster‐Bethe‐Lattice Treatment of the Silicon Pair Defect in Gallium Arsenide
- 1 June 1983
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 117 (2), K91-K94
- https://doi.org/10.1002/pssb.2221170247
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Host isotope fine structure of local modes: C and Si in GaAsJournal of Physics C: Solid State Physics, 1982
- Direct evidence for the site of substitutional carbon impurity in GaAsApplied Physics Letters, 1982
- Silicon donor-acceptor pair defects in gallium arsenideJournal of Physics C: Solid State Physics, 1979
- Cluster bethe lattice treatment for phonons in pseudobinary alloy systemsPhysica Status Solidi (b), 1979