Use of oxygen-doped AlxGa1−xAs for the insulating layer in MIS structures
- 15 May 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 32 (10), 678-679
- https://doi.org/10.1063/1.89853
Abstract
Metal‐insulator‐semiconductor capacitors were prepared by doping an Al0.5Ga0.5As layer with oxygen in order to demonstrate a lattice‐matched single‐crystal insulator‐semiconductor heterojunction. Crystal growth was by molecular‐beam epitaxy. Interface trap effects were not observed in capacitance‐voltage measurements, while the current‐voltage measurements show space‐charge‐limited currents for forward and reverse biases.Keywords
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