A GaAs/SixOyNz MIS FET
- 1 December 1976
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 47 (12), 5474-5475
- https://doi.org/10.1063/1.322542
Abstract
GaAs MIS field effect transistors (FET) have been fabricated using silicon oxynitride (SixOyNz) as the gate insulator. These devices display very little hysteresis and exhibit effective mobilities in excess of 2000 cm2/V sec. This paper reports on both the characteristics of the dielectrics used and on the resulting devices.Keywords
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