Tantalum as a diffusion barrier between copper and silicon

Abstract

We have investigated the effectiveness and failure mechanism of thin tantalum layers as diffusion barriers to copper. 50 nm tantalum films were sputtered onto unpatterned single‐crystal 〈100〉 Si wafers and overlaid with 100 nm Cu. Material reactions in these films were followed as a function of annealing temperature by in situ resistance measurements, and characterized by Rutherford backscattering spectroscopy and cross‐section transmission electron microscopy. While pure Cu on Si reacts at 200 °C, the Ta film prevents Cu silicon interaction up to 600 °C. At higher temperatures, reaction of the Si substrate with Ta forms a planar layer of hexagonal TaSi₂. Cu rapidly penetrates to the Si substrate, forming η‘‐Cu₃Si precipitates at the Ta‐Si₂‐Si interface.