Vertical cavity lasers on p-doped substrates
- 1 January 1997
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 33 (9), 783-784
- https://doi.org/10.1049/el:19970492
Abstract
Vertical cavity surface emitting laser (VCSEL) diodes fabricated with inverted polarity, i.e. p-type bottom mirror and n-type top mirror, are reported with lower resistance and diode voltage and comparable output characteristics relative to similar conventional, non-inverted structures.Keywords
This publication has 6 references indexed in Scilit:
- Uniparabolic mirror grading for vertical cavity surface emitting lasersApplied Physics Letters, 1996
- Low threshold voltage vertical-cavity lasers fabricated by selective oxidationElectronics Letters, 1994
- Carbon doping characteristics of GaAs and Al0.3Ga0.7As grown by atmospheric pressure metalorganic chemical vapor deposition using CCl4Journal of Crystal Growth, 1994
- Band-gap engineered digital alloy interfaces for lower resistance vertical-cavity surface-emitting lasersApplied Physics Letters, 1993
- High single-transverse-mode output from external-cavity surface-emitting laser diodesApplied Physics Letters, 1993
- N- and P-type dopant profiles in distributed Bragg reflector structures and their effect on resistanceApplied Physics Letters, 1992