High single-transverse-mode output from external-cavity surface-emitting laser diodes
- 20 September 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (12), 1607-1609
- https://doi.org/10.1063/1.110710
Abstract
Room-temperature cw electrically pumped external-cavity surface-emitting laser diodes are reported. The external cavity provides a way to control the transverse modes of the surface-emitting laser diodes. Powers greater than 100 mW pulsed and 2.4 mW cw in the lowest order (TEM00) transverse mode are reported. The surface-emitting laser diode was grown on a p-doped substrate, resulting in uniform current injection in devices as large as 100 μm in diameter. To our knowledge, this is also the first report of a working surface-emitting laser diode grown on a p-type substrate.Keywords
This publication has 6 references indexed in Scilit:
- Top-surface emitting lasers with 1.9 V threshold voltage and the effect of spatial hole burning on their transverse mode operation and efficienciesApplied Physics Letters, 1993
- Relative intensity noise of vertical cavity surface emitting lasersApplied Physics Letters, 1993
- High wallplug efficiency vertical-cavity surface-emitting lasers using lower barrier DBR mirrorsElectronics Letters, 1993
- Vertical-cavity surface-emitting laser diodes fabricated by phase-locked epitaxyApplied Physics Letters, 1991
- Anomalous temporal response of gain guided surface emitting lasersElectronics Letters, 1991
- Vertical-cavity surface-emitting InGaAs/GaAs lasers with planar lateral definitionApplied Physics Letters, 1990