Method of separating hysteresis effects from MIS capacitance measurements

Abstract

A new method is proposed to estimate interface state density in hysteretic MIS devices. In this method, a narrow bias‐voltage swing is applied around a certain center bias voltage to obtain a narrow C‐V curve without hysteresis. It is shown that the capacitance derivative obtained in this way depends on MIS capacitance only, and then can be used for determining the interface state density in the hysteretic InSb MIS devices.