Partial epitaxial growth of HfSi2 films grown on silicon
- 15 March 1987
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 61 (6), 2393-2395
- https://doi.org/10.1063/1.337955
Abstract
Epitaxial HfSi2 has been grown locally on (001)Si. In samples annealed in one step at 1100 °C or in two steps at 450–1100 °C, islands of HfSi2 of 0.8 μm in average grain size were found to cover about 40% of the surface area. About 70% of the disilicide in areal fraction was found to be epitaxial silicide, 0.6–1.2 μm in size. The orientation relationships between epitaxial HfSi2 and (001)Si substrate were analyzed to be [010]HfSi2∥[001]Si and (002)HfSi2∥(220)Si (with about 1° misorientation). Interfacial dislocations, 75 Å in average spacing, were identified to be of edge type with 1/2〈110〉 Burgers vectors. No HfSi2 epitaxy was found to form on (111)Si.Keywords
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