Localized epitaxial growth of tetragonal and hexagonal WSi2 on (111)Si
- 15 August 1985
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 58 (4), 1515-1518
- https://doi.org/10.1063/1.336308
Abstract
Both epitaxial tetragonal and hexagonal WSi2 (t‐WSi2 and h‐WSi2) were grown locally on (111)Si. The best epitaxy was obtained in 600–1100 °C two‐step annealed samples. The orientation relationships between t‐WSi2 and Si are [110]WSi2∥[111]Si and (004)WSi2∥(2̄02), whereas those between h‐WSi2 and Si are [0001]WSi2∥[111]Si and (202̄0)WSi2∥(202̄)Si. Interfacial dislocations, 80 Å in spacing, were identified to be of edge type with (1/6)〈112〉 Burgers vectors. Two step annealings were found to be effective in improving the epitaxy and relieving the island formation of WSi2 on Si. Significant intermixing of W and Si atoms during the preannealing is proposed to account for the effects.Keywords
This publication has 21 references indexed in Scilit:
- Epitaxial growth of VSi2 on (111) SiJournal of Applied Physics, 1985
- Epitaxial growth of ZrSi2 on silicon with an ion beam mixing assisted schemeApplied Physics Letters, 1985
- Schottky-Barrier Formation at Single-Crystal Metal-Semiconductor InterfacesPhysical Review Letters, 1984
- Summary Abstract: Two-stage process for silicide formation at metal–silicon interfacesJournal of Vacuum Science & Technology B, 1984
- Impurity Redistribution Studies on Laser-Formed SilicidesMRS Proceedings, 1982
- Observations on the hexagonal form of MoSi2 and WSi2 films produced by ion implantation and on related snowplow effectsJournal of Applied Physics, 1980
- XPS study of the chemical structure of the nickel/silicon interfaceJournal of Vacuum Science and Technology, 1980
- Reaction of Mo Thin Films on Si (100) SurfacesJournal of the Electrochemical Society, 1980
- An alternative marker experiment in the formation of Mo and W silicidesApplied Physics Letters, 1978
- On spinodal decomposition in cubic crystalsActa Metallurgica, 1962