Depth profile studies of extended defects induced by ion implantation in Si and Al
- 1 January 1980
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 49 (1-3), 75-79
- https://doi.org/10.1080/00337578008243072
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Dechanneling by dislocations in ion-implanted AlPhysical Review B, 1978
- Heavy ion ranges in aluminium and siliconRadiation Effects, 1978
- Energy Dependence of Channeling Analysis in Implantation Damaged AlPublished by Springer Nature ,1976
- Transmission Electron Microscope Studies of Defect Clusters in Aluminium Irradiated with Gold IonsPublished by Springer Nature ,1974
- Sb-Implanted Aℓ Studied by Ion Backscattering and Electron MicroscopyPublished by Springer Nature ,1974
- Dechanneling by stacking faults and dislocationsRadiation Effects, 1972