Observation of Direct Band Gap Properties in GenSim Strained-Layer Superlattices
- 1 November 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (11A), L1893-1895
- https://doi.org/10.1143/jjap.28.l1893
Abstract
Photoluminescence and optical absorption measurements were carried out for Ge n Si m strained-layer superlattices grown by molecular beam epitaxy using a phase-locked epitaxy technique. A Ge4Si12 superlattice showed intense emission in the near-infrared region, and its absorption coefficient followed the (h v-E g)1/2 law, where h v is the energy of incident light and E g is the band gap energy. These results suggest that the Ge4Si12 sample has a direct band gap.Keywords
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