MEASUREMENT OF ION IMPLANTATION LATTICE DAMAGE IN (111) GaAs USING THE SCANNING ELECTRON MICROSCOPE
- 15 June 1970
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 16 (12), 526-529
- https://doi.org/10.1063/1.1653092
Abstract
We have measured the Coates‐Kikuchi pattern degradation of (111) GaAs in the 5‐ to 30‐keV incident electron energy range as a function of 60‐keV cadmium ion dose (1012 to 1015 Cd+/cm2) at room temperature. Pattern degradation is greater for a given dose at 5‐keV than it is at 30‐keV incident electron energy. Agreement is found between the pattern degradation and measurements of lattice disorder as determined by backscattering of 1‐MeV helium ions. Annealing of the ion‐bombarded samples at temperatures up to 450°C restores the Coates‐Kikuchi pattern quality as the lattice damage is reduced.Keywords
This publication has 4 references indexed in Scilit:
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