Very high speed GaInAs metal-semiconductor-metal photodiode incorporating an AlInAs/GaInAs graded superlattice
- 2 January 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (1), 16-17
- https://doi.org/10.1063/1.100822
Abstract
A lateral structure metal-semiconductor-metal photodiode has been fabricated on GaInAs, in which an AlInAs/GaInAs graded superlattice has been incorporated. This photodiode has exhibited a dark current lower than 100 nA, an internal quantum efficiency of greater than 80% at a wavelength of 1.3 μm, and a capacitance of 40 fF, all at the bias voltage of 10 V. The response speed of this photodiode has been characterized by electro-optic sampling to exhibit a full width at half maximum of 14.7 ps.Keywords
This publication has 15 references indexed in Scilit:
- Monolithic integration of a 3-GHz detector/preamplifier using a refractory-gate, ion-implanted MESFET processIEEE Electron Device Letters, 1986
- Monolithic four-channel photodiode/amplifier receiver array integrated on a GaAs substrateJournal of Lightwave Technology, 1986
- Low dark current GaAs metal-semiconductor-metal (MSM) photodiodes using WSixcontactsIEEE Journal of Quantum Electronics, 1986
- MBE Growth of InGaAlAs Lattice-Matched to InP by Pulsed Molecular Beam MethodJapanese Journal of Applied Physics, 1986
- Monolithic GaAs photoreceiver for high-speed signal processing applicationsElectronics Letters, 1986
- Monolithic integration of a metal—semiconductor—metal photodiode and a GaAs preamplifierIEEE Electron Device Letters, 1984
- Optical response time of In0.53Ga0.47As/InP avalanche photodiodesApplied Physics Letters, 1982
- Frequency and pulse response of a novel high-speed interdigital surface photoconductor (IDPC)IEEE Electron Device Letters, 1981
- Metal-Semiconductor-Metal Photodetector for High-Speed Optoelectronic CircuitsJapanese Journal of Applied Physics, 1980
- Schottky barrier height of n-InxGa1−xAs diodesApplied Physics Letters, 1973