Monolithic integration of a metal—semiconductor—metal photodiode and a GaAs preamplifier
- 1 December 1984
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 5 (12), 531-532
- https://doi.org/10.1109/edl.1984.26014
Abstract
A metal-semiconductor-metal (MSM) photodiode and a preamplifier have been monolithically integrated on a GaAs substrate by a very simple fabrication process. Measurements have shown that the constituent MSM photodiode has a sensitivity of 2.2 A/W and a -3-dB cutoff frequency of as high as 1 GHz. The present photodiode has been found to realize an extremely high photosensitivity of the monolithically integrated circuit, 26 mV/µW.Keywords
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