MBE Growth of InGaAlAs Lattice-Matched to InP by Pulsed Molecular Beam Method
- 1 March 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (3A), L254
- https://doi.org/10.1143/jjap.25.l254
Abstract
High-quality InGaAlAs lattice-matched to InP was obtained by MBE with a pulsed molecular beam. Very narrow full width at half maximum (FWHM) of a photoluminescence spectrum at 4.2 K (4.5, 9.0, 10.3, 13.1, 16.2 meV) was obtained for In0.52(Ga1-x Al x )0.48As(x=0, 0.25, 0.5, 0.75, 1). The dependence of the energy band gap of In0.52(Ga1-x Al x )0.48As on Al composition, x, was found to be linear in the range of 0≦x≦1.Keywords
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