Tunneling images of the 5×5 surface reconstruction on Ge-Si(111)
- 15 December 1985
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 32 (12), 8455-8457
- https://doi.org/10.1103/physrevb.32.8455
Abstract
Germanium-silicon alloys can be prepared on crystalline silicon (111) substrates and have been observed to have 5×5 surface reconstructions. We present tunneling images of this surface which show that is has strong similarities to the Si(111)7×7 reconstruction. A model related to that proposed by Takayanagi, Ytaniahiro, and Kobayashi accounts for the general features of the observed reconstruction. In addition the surface is observed to have periodic vertical modulations which indicate an ordered Ge-Si surface alloy.Keywords
This publication has 13 references indexed in Scilit:
- Observation of Order-Disorder Transitions in Strained-Semiconductor SystemsPhysical Review Letters, 1985
- Tunneling Images of Germanium Surface Reconstructions and Phase BoundariesPhysical Review Letters, 1985
- X-ray-standing-wave interface studies of germanium on Si(111)Physical Review B, 1985
- New adatom model for Si(111) 7×7 and Si(111)-Ge 5×5 reconstructed surfacesPhysical Review B, 1984
- "Surface Dislocation" Process for Surface Reconstruction and Its Application to the Silicon (111) 7×7 ReconstructionPhysical Review Letters, 1983
- 7 × 7 Reconstruction on Si(111) Resolved in Real SpacePhysical Review Letters, 1983
- On the structure of the laser irradiated Si(111)-(1 × 1) surfaceSolid State Communications, 1982
- Direct observation of the phase transition between the (7 × 7) and (1 × 1) structures of clean (111) silicon surfacesSurface Science, 1981
- Nature of the Si(111)7 × 7 reconstructionPhysical Review B, 1981
- Atomic Displacements in the Si(111)-(7×7) SurfacePhysical Review Letters, 1980