III-V alloy heterostructure high speed avalanche photodiodes
- 1 July 1979
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 15 (7), 549-558
- https://doi.org/10.1109/jqe.1979.1070061
Abstract
No abstract availableKeywords
This publication has 40 references indexed in Scilit:
- Ionization coefficients of Ga0.72Al0.28Sb avalanche photodetectorsApplied Physics Letters, 1978
- Liquid phase epitaxial In1−xGaxAsyP1−y lattice matched to 〈100〉 InP over the complete wavelength range 0.92⩽λ⩽1.65 μmApplied Physics Letters, 1978
- Single and multiple thin-layer (L z≲400 A) In1−xGaxP1−zAsz-InP heterostructure light emitters and lasers (λ∼1.1 μm, 77 °K)Journal of Applied Physics, 1978
- Phase Diagram of the In‐Ga‐As‐P Quaternary System and LPE Growth Conditions for Lattice Matching on InP SubstratesJournal of the Electrochemical Society, 1978
- Lattice matching and dislocations in LPE in1−xGaxP1−zAsz—InP heterojunctionsJournal of Crystal Growth, 1977
- Growth and characterization of InGaAsP–InP lattice-matched heterojunctionsJournal of Vacuum Science and Technology, 1976
- Room-temperature cw operation of GaInAsP/InP double-heterostructure diode lasers emitting at 1.1 μ mApplied Physics Letters, 1976
- Schottky barrier InxGa1−xAs alloy avalanche photodiodes for 1.06 μmApplied Physics Letters, 1974
- Growth and Characterization of InP-lnGaAsP Lattice-Matched HeterojunctionsJournal of the Electrochemical Society, 1973
- Ionization Rates of Holes and Electrons in SiliconPhysical Review B, 1964