Ionization coefficients of Ga0.72Al0.28Sb avalanche photodetectors
- 1 December 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 33 (11), 948-950
- https://doi.org/10.1063/1.90229
Abstract
The performance of an optical receiver depends heavily on the excess multiplication noise characteristics of the avalanchephotodetector. The excess multiplication noise factor of an avalanche photodiode depends on the ratio of the electron and hole ionization coefficients. The ionization coefficients of 1.06‐μm photodiodes fabricated from Ga0.72Al0.28Sb have been measured. The results show a hole‐to‐electron ionization‐coefficient ratio of 2, which implies an excess gain noise factor F of 5.9 when the diode is operated at a gain of 10.Keywords
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