Dependence of Growth Properties of Silicon-Doped GaAs Epitaxial Layers upon Orientation
- 1 October 1971
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 42 (11), 4512-4513
- https://doi.org/10.1063/1.1659807
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
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- Luminescence in Silicon-Doped GaAs Grown by Liquid-Phase EpitaxyJournal of Applied Physics, 1968
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- EFFICIENT ELECTROLUMINESCENCE FROM GaAs DIODES AT 300°KApplied Physics Letters, 1966
- The Ga-As-Si Ternary Phase SystemJournal of the Electrochemical Society, 1966
- Etch Pits in Gallium ArsenideJournal of Applied Physics, 1960