Wafer direct bonding of compound semiconductors and silicon at room temperature by the surface activated bonding method
- 1 June 1997
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 117-118, 808-812
- https://doi.org/10.1016/s0169-4332(97)80187-0
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Room temperature GaAsSi and InPSi wafer direct bonding by the surface activated bonding methodNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1997
- Fabrication of (001) InP-based 1.55-μm wavelength lasers on a (110) GaAs substrate by direct bonding (A prospect for free-orientation integration)Applied Physics Letters, 1995
- High-quality InGaAs/InP multiquantum-well structures on Si fabricated by direct bondingElectronics Letters, 1994
- Low threshold, wafer fused long wavelength vertical cavity lasersApplied Physics Letters, 1994
- Electrical characteristics of directly-bonded GaAs and InPApplied Physics Letters, 1993
- Intergranular fracture of fast reactor irradiated stainless steelActa Metallurgica et Materialia, 1992
- Bonding by atomic rearrangement of InP/InGaAsP 1.5 μm wavelength lasers on GaAs substratesApplied Physics Letters, 1991
- Wafer fusion: A novel technique for optoelectronic device fabrication and monolithic integrationApplied Physics Letters, 1990