Analysis of transmission electron microscopy images of hydrogen platelets in proton-bombarded GaAs

Abstract
The technique of cross-sectional transmission electron microscopy has been applied to study the nature of the hydrogen platelets on {110} planes in proton-bombarded (5×1015 H+ cm−2 at 300 keV) and annealed (temperatures of 500 °C and above) GaAs samples. Models are presented to explain the absorption of hydrogen atoms at platelets and to calculate gas pressures in platelets. From a consideration of the radiation-induced damage and annealing processes, the absence of self-interstitial loops in these low-dose samples is explained.