Antiphase-domain-free growth of cubic SiC on Si(100)
- 29 June 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (26), 1888-1890
- https://doi.org/10.1063/1.97676
Abstract
Single crystals of cubic SiC that are free of antiphase domains were successfully grown by chemical vapor deposition on Si substrates inclined at 2° from (100) towards (011). The relationship between the generation of antiphase domains and the inclination of a surface was investigated by using spherically polished Si substrates. Inclination, except towards (011), resulted in the generation of antiphase domains. Elimination of antiphase domains was confirmed by molten KOH etching of the grown layer.Keywords
This publication has 9 references indexed in Scilit:
- Surface morphology of cubic SiC(100) grown on Si(100) by chemical vapor depositionJournal of Crystal Growth, 1986
- Fabrication of inversion-type n-channel MOSFET's using cubic-SiC on SiIEEE Electron Device Letters, 1986
- Si(001)-2×1 Single-Domain Structure Obtained by High Temperature AnnealingJapanese Journal of Applied Physics, 1986
- Production of large-area single-crystal wafers of cubic SiC for semiconductor devicesApplied Physics Letters, 1983
- IVA-8 heteroepitaxial growth of cubic silicon carbide on foreign substratesIEEE Transactions on Electron Devices, 1981
- On the (110) orientation as the preferred orientation for the molecular beam epitaxial growth of GaAs on Ge, GaP on Si, and similar zincblende-on-diamond systemsApplied Physics Letters, 1980
- LEED study of the stepped surface of vicinal Si (100)Surface Science, 1980
- Structural and Electronic Properties of Stepped Semiconductor SurfacesJapanese Journal of Applied Physics, 1974
- Growth and Properties of β-SiC Single CrystalsJournal of Applied Physics, 1966