Use of ion beam techniques to characterize thin plasma grown GaAs and GaAlAs oxide films
- 1 March 1978
- journal article
- Published by Elsevier in Nuclear Instruments and Methods
- Vol. 149 (1-3), 619-622
- https://doi.org/10.1016/0029-554x(78)90939-4
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Plasma oxidation of GaAsApplied Physics Letters, 1976
- The combined use of He back-scattering and He-induced X-rays in the study of anodically grown oxide films on GaAsThin Solid Films, 1973
- Energy levels of A = 21−44 nuclei (V)Nuclear Physics A, 1973
- Universal Cross Sections for-Shell Ionization by Heavy Charged Particles. I. Low Particle VelocitiesPhysical Review A, 1973
- Range and stopping-power tables for heavy ionsAtomic Data and Nuclear Data Tables, 1970