Initial stage of MOCVD growth of GaAs on Si
- 31 December 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 93 (1-4), 443-448
- https://doi.org/10.1016/0022-0248(88)90565-9
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- MOCVD GaAs growth on Ge (100) and Si (100) substratesJournal of Crystal Growth, 1986
- Epitaxial growth and material properties of GaAs on Si grown by MOCVDJournal of Crystal Growth, 1986
- Effects of the Substrate Offset Angle on the Growth of GaAs on Si SubstrateJapanese Journal of Applied Physics, 1986
- Molecular Beam Epitaxy of Controlled Single Domain GaAs on Si (100)Japanese Journal of Applied Physics, 1986
- Growth of GaAs on Si by MOVCDJournal of Crystal Growth, 1984