Characterization of radiative recombination in amorphous silicon by optically detected magnetic resonance: Part II
- 1 November 1982
- journal article
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 46 (5), 501-513
- https://doi.org/10.1080/01418638208224024
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Characterization of radiative recombination in amorphous silicon by optically detected magnetic resonance: Part IPhilosophical Magazine Part B, 1982
- Time-resolved ODMR in a-Si:H by frequency response spectroscopy (FRS)Journal of Physics C: Solid State Physics, 1982
- On the role of the dangling bond as a radiative centre in a-Si:HSolid State Communications, 1982
- Radiative and nonradiative recombination processes in hydrogenated amorphous silicon as elucidated by optically detected magnetic resonanceSolid State Communications, 1981
- Optically detected magnetic resonance (O.D.M.R.) investigations of recombination processes in semiconductorsAdvances in Physics, 1981
- The behaviour of donor-acceptor recombination emission in II-VI crystals subjected to magnetic resonanceJournal of Physics C: Solid State Physics, 1979
- Optically detected electron spin resonance in amorphous siliconSolid State Communications, 1978
- Spin dependent luminescence in hydrogenated amorphous siliconPhilosophical Magazine Part B, 1978